1. Product Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying remarkable atomic bond strength.
The Si– C bond, with a bond energy of around 318 kJ/mol, is among the best in architectural porcelains, conferring impressive thermal security, hardness, and resistance to chemical strike.
This robust covalent network causes a product with a melting factor exceeding 2700 ° C(sublimes), making it one of the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical strength and creep resistance at temperature levels above 1400 ° C, where lots of steels and traditional porcelains start to soften or weaken.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for fast thermal cycling without catastrophic fracturing, a vital quality for crucible performance.
These inherent buildings stem from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise a highly steady and densely packed crystal structure.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are normally produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive duty in durability and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperature levels over 2000 ° C, often with boron or carbon ingredients to improve densification and grain boundary communication.
This procedure generates a completely thick, fine-grained structure with minimal porosity (
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