1. Crystallography and Product Fundamentals of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its exceptional polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds but differing in stacking sequences of Si-C bilayers.
One of the most highly appropriate polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each showing subtle variations in bandgap, electron flexibility, and thermal conductivity that affect their suitability for certain applications.
The strength of the Si– C bond, with a bond power of about 318 kJ/mol, underpins SiC’s amazing hardness (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.
In ceramic plates, the polytype is usually chosen based on the meant usage: 6H-SiC is common in architectural applications because of its ease of synthesis, while 4H-SiC dominates in high-power electronic devices for its exceptional cost provider mobility.
The large bandgap (2.9– 3.3 eV depending on polytype) also makes SiC an exceptional electrical insulator in its pure type, though it can be doped to function as a semiconductor in specialized digital devices.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is critically based on microstructural features such as grain size, density, stage homogeneity, and the presence of additional phases or impurities.
Top notch plates are generally produced from submicron or nanoscale SiC powders with advanced sintering methods, causing fine-grained, completely dense microstructures that maximize mechanical strength and thermal conductivity.
Contaminations such as complimentary carbon, silica (SiO ₂), or sintering help like boron or aluminum should be carefully managed, as they can create intergranular movies that minimize high-temperature stamina and oxidation resistance.
Residual porosity, also at low degrees (
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